PART |
Description |
Maker |
HYB39D128323C-4.5 HYB25D128323C-3.0 HYB25D128323C- |
Specialty DRAMs - 333MHz (4Mx 32) Specialty DRAMs - 300MHz (4M x 32) Specialty DRAMs - 275MHz (4M x 32) Low power Specialty DRAMs - 222MHz (4M x 32) Low power
|
Infineon
|
HYB18RL25616AC-4 HYB18RL25616AC-5 HYB18RL25632AC-5 |
16M X 16 DDR DRAM, PBGA144 Specialty DRAMs - 256M (8Mx32) 200MHz Specialty DRAMs - 256M (16Mx16) 200MHz Specialty DRAMs - 256M (16Mx16) 250MHz
|
INFINEON TECHNOLOGIES AG
|
HYB25L512160AC-7.5 HYE25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16) 133MHz 3-3-3 Specialty DRAMs - 512M (32Mx16)133MHz 3-3-3 Ext. Temp.
|
Infineon
|
HYB39L256160AC HYB39L256160AC-8 HYB39L256160AT-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
AT88SC0104CA-SU88SC0104 AT88SC0104CA-MP88SC0104 AT |
SPECIALTY MEMORY CIRCUIT, PDSO8 GREEN, PLASTIC, SOIC-8 SPECIALTY MEMORY CIRCUIT, DMA SPECIALTY MEMORY CIRCUIT, QMA SPECIALTY MEMORY CIRCUIT, PDIP8 GREEN, PLASTIC, PDIP-8 SPECIALTY MEMORY CIRCUIT, PTSO8
|
Atmel, Corp. ATMEL CORP
|
CYDM256B16-40BVXC CYDM064B16-40BVXC CYDM128B16-40B |
16K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100 4K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100 8K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
KMM5322204C2WG KMM5322204C2W |
2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V 200万32的DRAM上海药物研究所使用1Mx16,每1000刷新V
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor]
|